By a Account Reporter-Staff Account Editor at Electronics Newsweekly — According to account advertisement basic from Alexandria, Virginia, by VerticalNews journalists, a apparent by the artist Fujiwara, Takako (Tokyo, JP), filed on March 7, 2016, was appear online on May 15, 2018.
The abettor for this patent, apparent cardinal 9972749, is Stanley Electric Co. Ltd. (Tokyo, JP).
Reporters acquired the afterward adduce from the accomplishments advice supplied by the inventors: “A semiconductor light-emitting aspect is usually produced by growing a semiconductor anatomy bandage formed from an n-type semiconductor layer, an alive layer, and a p-type semiconductor bandage on a advance substrate, and basic an n-electrode and a p-electrode that administer a voltage to the n-type semiconductor bandage and the p-type semiconductor layer, respectively.
“Japanese Apparent No. 4984119 discloses a semiconductor light-emitting aspect including an alive bandage that is laminated on a substrate and has a apparent including a allocation of which an affection bend with account to the substrate changes smoothly, and a adjustment for accomplishment the same. Non-Patent Literature 1 discloses a light-emitting diode including an alive bandage accepting a assorted breakthrough able-bodied anatomy in which an InGaN bandage is laminated on accession InGaN bandage that has a aerial indium agreement and a nanostructure.”
In accession to accepting accomplishments advice on this patent, VerticalNews editors additionally acquired the inventor’s arbitrary advice for this patent: “Technical Problem
“The semiconductor light-emitting aspect emits ablaze by accumulation (recombining) an electron and aperture injected into the aspect from the electrodes in the alive layer. The amicableness (i.e., emitted ablaze color) of ablaze emitted from the alive bandage varies with the bandage bap of the semiconductor actual basic the alive layer. For example, if the light-emitting aspect uses a nitride-based semiconductor, dejected ablaze is emitted from the alive layer.
“Some ablaze sources, such as one for beam applications, charge aerial blush apprehension properties. A ablaze antecedent accepting aerial blush apprehension backdrop emits ablaze agnate to accustomed light. To access aerial blush apprehension properties, ablaze accepting wavelengths beyond about the absolute arresting arena is finer extracted from the ablaze source. For example, ablaze extracted from a ablaze antecedent accepting aerial blush analysis backdrop is empiric as white light.
“There accept been proposed assorted techniques for accepting white ablaze by application a semiconductor light-emitting element. An archetype is a address for bond a amicableness about-face affiliate such as a phosphor into a sealing resin, and sealing the aspect with the sealing adhesive to aftermath a light-emitting device. For example, if a semiconductor light-emitting aspect uses an alive bandage that emits dejected light, a allotment of the dejected ablaze from the alive bandage is adapted into chicken ablaze by a phosphor, and the dejected ablaze and the chicken ablaze are alloyed and extracted. White ablaze is again empiric as a whole. Like Apparent Literature 1 and the like, there accept been proposed techniques for basic an asperous arrangement by application a processing address such as carving afore the advance of the alive layer, and basic the alive bandage on the absorbed surfaces to widen the ambit of discharge wavelengths after application a phosphor.
“However, if a light-emitting accessory is produced by application such techniques, there accept been problems in agreement of the accord of the discharge wavelengths aural the device, the aggravation of the accomplishment steps, and light-emitting intensity. Examples accommodate the accession of a bond footfall of a phosphor, a civil change of the amicableness about-face ability of the phosphor, the accession of a footfall of processing a semiconductor layer, and abasement of crystallinity due to the processing of the semiconductor layer.
“The present apparatus has been fabricated in appearance of the above problems, and an commodity thereof is to accommodate a semiconductor light-emitting aspect that eliminates the charge for a amicableness about-face affiliate such as a phosphor, has aerial blush apprehension backdrop and aerial light-emitting acuteness with a advanced discharge amicableness bandwidth (spectral width) beyond the arresting region, and is calmly to ascendancy the discharge amicableness range.
“Solution to Problem
“The semiconductor light-emitting aspect according to the present apparatus includes: a aboriginal semiconductor bandage of a aboriginal application type; a light-emitting anatomic bandage formed on the aboriginal semiconductor layer; and a additional semiconductor bandage that is formed on the light-emitting anatomic bandage and is of a additional application blazon adverse to that of the aboriginal semiconductor layer, wherein the light-emitting anatomic bandage includes a benumbed bandage that is formed on the aboriginal semiconductor bandage and benumbed with a dopant of the additional application type, a abject bandage formed on the benumbed layer, the abject bandage accepting such a agreement that causes accent and ache in said abject bandage from the benumbed layer, said abject bandage including a advantage of abject segments formed in a accidental net shape, and a breakthrough able-bodied anatomy bandage formed on the abject layer.”
For added information, see this patent: Fujiwara, Takako. Semiconductor Light-Emitting Element. U.S. Apparent Cardinal 9972749, filed March 7, 2016, and appear online on May 15, 2018. Apparent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=/netahtml/PTO/srchnum.htm&r=1&f=G&l=50&s1=9972749.PN.&OS=PN/9972749RS=PN/9972749
Keywords for this account commodity include: Asia, Japan, Business, Electronics, Semiconductor, Stanley Electric Co. Ltd.
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